发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PROCESS FOR PRODUCING THE SAME
摘要 <p>Concaves and convexes are formed in a light transmitting conductive layer provided on a surface of a light emitting device made of nitride semiconductor, thereby light emitted from a light emitting layer is totally reflected repeatedly in a semiconductor lamination portion and a substrate and can be effectively taken out without attenuation, and external quantum efficiency can be improved. A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion.</p>
申请公布号 EP1968124(A1) 申请公布日期 2008.09.10
申请号 EP20060843594 申请日期 2006.12.28
申请人 ROHM CO., LTD. 发明人 YAMAGUCHI, ATSUSHI;NAKAHARA, KEN
分类号 H01L33/42;H01L33/06;H01L33/22;H01L33/32;H01L33/38;H01L33/44 主分类号 H01L33/42
代理机构 代理人
主权项
地址