摘要 |
The present invention relates to an array of transistors arranged next to each other on a semiconductor substrate, the' substrate comprising p-well or n-well diffusions forming the body regions of the transistors, each transistor comprising a source, a drain and a gate, wherein the array of transistors further comprises at least one electrical connection (100, 102, 104, 106) to the body regions, wherein said electrical connection is shared by at least two transistors of said array. Also disclosed is a semiconductor device comprising at least one source, at least one drain, at least one gate between the at least one source and the at least one drain, and at least one structure (110, 112, 114, 116) of the same material as the at least one gate which does not have a connection means for electrical connection to the at least one gate. |
申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG;STRIBLEY, PAUL, RONALD;ELLIS, JOHN, NIGEL |
发明人 |
STRIBLEY, PAUL, RONALD;ELLIS, JOHN, NIGEL |