| 摘要 |
PURPOSE:To improve the yield by etching with special etchant, thereby sequentially etching a CdS film and a CdTe film and eliminating the displacement at the mask matching time. CONSTITUTION:A transparent electrode 22, a CdS film 23, a CdTe film 24 are formed on a glass substrate 21, a positive resist 25 is covered, a mask 26 is covered, the films 23, 24 are etched in desired size, and an Ni 29 is then deposited. The etchant contains 50-100% of HNO2, 50-0% of K2Cr2O7 by weight diluted with 1-20 times of H2O. A series of steps of coating resist, matching mask, exposing, developing, cleaning and drying, etching, removing the resist, cleaning and drying can be processed once, and the displacement at the time of etching the CdS film and the CdTe film is not caused. |
