| 摘要 |
In the manufacture of integrated circuits, it is often necessary to prepare dielectrically-isolated single-crystal silicon regions to be used as substrates in which various circuit elements may be formed. These regions or substrates are formed by attaching a single-crystal silicon wafer (1) having a dielectrically-coated surface (2) to a second single-crystal silicon wafer (3) by means of an intermediate metallic layer (4) positioned therebetween. Using a heating process, e.g., a thermomigration process also referred to as temperature gradient zone-melting (TGZM) technique, the metallic layer (4) is removed through the second silicon wafer (3). This method substantially eliminates any bending or warpage of the dielectrically-isolated substrate (FIG. 1).
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