| 摘要 |
PURPOSE:To simplify stages for manufacturing a semiconductor having a multilayered structure by electrically separating a crystal layer grown by bringing a polycrystal Si film into partial contact with a single crystal substrate from the substrate. CONSTITUTION:An SiO2 film 2 is deposited on a single crystal Si substrate 1, and oxygen 10 for separation different from the constituent element of the substrate 1 or the constituent element of a polycrystal or amorphous film to be formed on the substrate 1 is implanted into the film 2 to form a film 2' having a higher O content than the stoichiometric ratio of SiO2. The film 2' is partially removed to expose the substrate surface 3. Polycrystal Si 4 is deposited on the substrate 1, and by irradiating the Si 4 with energy 5, single crystallization is caused from the surface 3 to form a single crystal region 6. At the same time, an excess of O is diffused from the SiO2 2', and the region 6 is converted into an SiO2 region. Oxidation proceeds, the substrate surface 12 among the SiO2 parts 2' is covered with SiO2, and the region 6 is electrically separated from the substrate 1 by an oxide layer 14, that is, a high resistance layer. |
