发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To shorten the transfer channels of signals for accelerating the operational speed of basic cells by a method wherein signal interconnections are connected to intermediate parts of gate electrodes in P channel MISFETs and N channel MISFETs comprising the basic cells. CONSTITUTION:A basic cell Ce is composed of three each of P channel MISFETs arranged in series and three each of N channel MISFETs arranged in series. Furthermore, gate electrodes 9 of respective P channel MISFETs and N channel MISFETs are formed into one body. Among the interconnections connecting the basic cells Ce, interconnections 12 comprising the first layered aluminium films are used in the direction intersecting with the lines 2 of basic cells Ce while interconnections 15 comprising the second layered aluminium films are used as the interconnections extending in the same direction as that of the lines 2 of basic cells Ce. In such a constitution, the transfer channels of signals running to respective P channel MISFETs and N channel MISFETs can be shortened by connecting the interconnections 12A to the intermediate parts of gate electrodes 9.
申请公布号 JPS62219539(A) 申请公布日期 1987.09.26
申请号 JP19860060507 申请日期 1986.03.20
申请人 HITACHI LTD 发明人 UCHIDA SATORU;SATO EIICHIRO
分类号 H01L27/092;H01L21/82;H01L21/8238;H01L27/118 主分类号 H01L27/092
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