| 摘要 |
PURPOSE:To reduce stress to be generated in semiconductor elements according to temperature variation, and to improve the heat cycle withstand characteristic of the semiconductor device by a method wherein the expanding and contracting direction at the lead part of resin and the normal direction of the thin plate structural part of lead wires are made to coincide mutually. CONSTITUTION:The lead wires 1 of two pieces are arranged as to make the electrode parts 13 thereof to position in parallel mutually, and as to make the lead parts 11 to position at the opposite side mutually, the electrode parts 13 of the lead wires 1 of other two sheets are stacked thereon as to make to be in the condition that the electrode parts 13 are rotated respectively at 90 deg., the semiconductor elements 2 are interposed between the overlapping parts of the electrode parts 13 of the upper and lower sides four sheets to be joined with solder, andthey are molded with resin 3. At the semiconductor device constructed by this way, relative transpositions of the lead parts 11 to the electrode parts 13 are generated in the transpositional directions 6 of the lead parts 11 according to the difference between the coefficients of thermal expansion of resin 3 and the electrode parts 13. While, because the normal directions of inclined flat plate parts 14 coincide with the transpositional directions of the lead parts 11, transpositions of the lead wires 1 are absorbed in bending deformation of the inclined flat plate parts 14, and stress to be generated in the semiconductor elements 2 being in the condition interposed between the electrode parts 13 of respective two sheets can be reduced. |
