| 摘要 |
PURPOSE:To obtain an excellent nonvolatile memory which simplifies the manufacture by planely arranging floating and control gate electrodes on a gate insulating film and an interelement isolating insulating film. CONSTITUTION:A field oxidized film 12 and a gate oxidized film 13 are formed on an Si substrate 11, a polysilicon layer 14 is superposed and thermally oxidized, and a floating gate 14a, a control gate 14b and electrodes 20 are insulated and isolated. The interval of the gates 14a, 14b is set to approx. both thickness, and can be controlled by an oxidizing method. Electrodes 18, 19 are attached to source and drain 16, 17, and an SiO2 film 15 is covered. When a voltage is applied to an electrode 14b, a voltage is induced by capacitive coupling at the electrode 14a, and an FET is conducted ON. Hot electrons are implanted to the electrode 14a to lower the voltage, and the FET is eventually conducted ON to finish the writing. In the erasure, an ultraviolet ray is, for example, emitted. According to this structure, since it is a gate sole layer structure, the manufacture can be simplified, thereby obtaining an excellent nonvolatile memory. |
