发明名称 |
Methods of making narrow channel field effect transistors |
摘要 |
A pair of narrow channel IGFET devices having separate insulated gate electrode structures formed over narrow channel regions of a substrate flanking a central enhancement region. Methods of forming the narrow channel regions using a single photolithography step and forming separate gate electrode structures overlying each using alternative processes, each generally involving two photolithography steps, are set forth.
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申请公布号 |
US4409727(A) |
申请公布日期 |
1983.10.18 |
申请号 |
US19820425770 |
申请日期 |
1982.09.28 |
申请人 |
NCR CORPORATION |
发明人 |
DALTON, JR., PHILIP A.;BERGSTEDT, LOWELL C. |
分类号 |
H01L21/336;H01L21/8234;H01L29/78;(IPC1-7):H01L21/22;H01L21/26 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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