| 摘要 |
PURPOSE:To carry out the heating of the substrate for an Si photosensitive layer in high efficiency, by using an apparatus composed of a reaction chamber to deposit the Si-layer on the substrate placed in the chamber, and a heating means to heat the substrate. CONSTITUTION:For example, an Al drum is used as a substrate 6, and set up on the supporting table 5. The reaction chamber 1 is evacuated, the table 5 is rotated, and the substrate 6 is irradiated with a halogen lamp 4 to raise the surface temperature of the substrate 6 to about 250 deg.C. The reaction gas containing silane gas for the formation of amorphous silicon photosensitive material is introduced into the reaction chamber 1 to a pressure of about 0.3Torr. An a-Si photosensitive material is deposited on the substrate by energizing a radiofrequency electrical source and carrying out the glow discharge. |
