发明名称 PREPARATION OF SINGLE CRYSTAL OF INORGANIC COMPOUND
摘要 PURPOSE:To obtain a single crystal of good quality with a few crystal defects of a specific inorganic compound, by preparing the single crystal of the inorganic compound with a boat for growing the single crystal at a specified temperature by the gradient freezing (GF) method. CONSTITUTION:A seed crystal of a compound of Groups III-V and a polycrystal or an element to be a raw material of Group III are introduced into a boat for growing single crystal and a corresponding element of Group V are sealed up in a sealed tube to generate the vapor pressure of the element of Group Vcorresponding to the dissociation pressure near the melting point of the compound of Groups III-V. In case the element of Group III is contained in the boat for growing the single crystal, the element is reacted with the element of Group V in the process of growing the single crystal to form a compound of Groups III-V and produce a melt thereof. For growing the single crystal, the temperature of the boat is set to be not lower than the temperature range within 15 deg.C on the low temperature side from the melting point of the above-mentioned inorganic compound and give within 20 deg.C temperature difference between the high and low temperature parts of the boat.
申请公布号 JPS58176193(A) 申请公布日期 1983.10.15
申请号 JP19820059008 申请日期 1982.04.09
申请人 MITSUBISHI MONSANTO KASEI KK 发明人 HIGURE HISASHI;ORITO FUMIO
分类号 C30B11/00;C30B11/04;C30B11/06;C30B29/40;H01L21/208 主分类号 C30B11/00
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