| 摘要 |
PURPOSE:To prevent the generation of a slip line by subsidiarily heating the semicondutor by a subsidiary heating source, a temperature thereof is elevated by being subject to light irradiation, so that temperature difference between the central section and a section in the vicinity of the outer circumference of the wafer is reduced. CONSTITUTION:Each twelve of cylindrical halogen electric bulbs, power consumption thereof is 1.5KW, are arranged adjacent onto one plane from the upper section and lower section of the semiconductor wafer 1 to form the type of a surface light source, and light is irradiated so that the surface temperature of the wafer 1 is made to reach approximately 1,250 deg.C at the central section 1a. The wafer 1 is single crystalline silicon, a diameter thereof is four inch, thickness thereof is 0.4mm. and to which the ions of boron, reflectivity thereof in 10,000Angstrom is 0.3, are implanted. With a molybdenum board 2, thickness is 0.6mm., width 10mm., an inner diameter R 11cm and reflectivity 0.65, and it is arranged so as to surround the outer circumference 1c of the wafer 1. Pawls 2a support the wafer 1 at several positions. When light is irradiated, the temperature of the molybdenum board 2 is also elevated, and the wafer 1 is heated subsidiarily. |
