| 摘要 |
PURPOSE:To enhance effectively the withstand voltage between a gate and a source by a method wherein a diode is connected in series to the source. CONSTITUTION:An n-type island region 10 is provided in a p-type isolation region 3, the region 3, which is the anode side of the diode constructed by forming p-n junction 11 between both, is connected to the source region 6 of the J- FET through an electrode 16 extended thereon, and a cathode electrode 16a formed on the surface of the region 10, which is the cathode side of the diode, is used as the apparent source electrode. As a result, the defect of the usual closed gate type J-FET that the withstand voltage between a source and a drain is small, and the range of practical application is narrow can be compensated by forming structure connected the diode to the source in series, and by putting the closed gate type J-FET to practical use, the character that the high- frequency characteristic thereof is favorable can be exhibited sufficiently. |
