| 摘要 |
PURPOSE:To improve the oxidation resistance of W of low specific resistance and change a device into high integration and high speed one by a method wherein the surface is coated with a material easier to be oxidized than W so that the thickness becomes that of monomolecular layer or more by using W as electrode and wiring material. CONSTITUTION:A gate electrode 3 constituted of W of thickness 0.3mum is formed on a thermally oxidized Si thermal oxide film 1, and the surface of the electrode 3 is coated, into a thickness of that of a monomolecular layer or more, with the material 2 such as Cr, V, Si, Al, and Nb which is easier to be oxidized than W. With the electrode 3 as a mask, As ions 5 of 80KeV are implanted and heat- treated in N2 containing several ppm of O2. |
