| 摘要 |
PURPOSE:To realize wiring connection with high quality and high yield without damage on the wirings by changing the wiring portion to the conductive condition from non-conductive condition through irradiations of laser beam in plural times at a low power intensity. CONSTITUTION:The wiring portion insulated from a substrate 1 by a SiO2 film deposited on the substrate 1 is composed of low resistance layers 3, 4 and a high resistance layer 5 and moreover it is configurated with formation of insulating films 8, 9, 10 in addition to them. In case of connecting this connecting portion, the laser beam is condensed and irradiated to the high resistance layer 5 and the low resistance layers 3, 4 in both side thereof with the not indicated optical system, in view of changing the high resistance layer 5 into the low resistance layer. The laser beam is irradiated pulsively for several times in such a density as 3/4 or less of the minimum value of the power density which is enough for cutting the Si wiring with one pulse. Thereby, wiring connection can be realized with high quality and yield without generating any damage on the wiring portion even if the laser oscillator output is fluctuated. |
