| 摘要 |
PURPOSE:To make possible micro-miniaturization of conductive film pattern and multi-layer conductive film by including a process for partly removing inter-layer insulating film by irradiating the ion beam shower in such a direction as inclined by a constant angle from the normal direction of the substrate. CONSTITUTION:The conductive films 23, 23' are selectively formed on a first insulating film 22 which covers a semiconductor substrate 21 and provides an aperture, and a second insulating film 24 is formed thereon. After the insulating film 24 is partly removed by irradiating the ion beam shower to the substrate 1 from a direction inclined by a constant angle from the normal direction thereof, a third insulating film 25 is formed. Thereafter, the insulating film 25 is partly removed by irradiating the ion beam shower from the normal direction of substrate 21, and moreover apertures are formed on the insulting films 24, 25 on the conductive film 23. Thereafter, a second conductive film 26 is selectively formed in such a manner as covering at least a part of the apertures provided selectively on the insulating films 24, 25 and extending on the insulating film 25. |
