发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM
摘要 In supplying process gas to a substrate to process the substrate in a vacuum atmosphere, sliding of the substrate on a loading base accompanied with a change in pressure is suppressed. Process gas is supplied to a wafer (W) loaded on a loading base (3), pressure in a vacuum container (2) is set to first pressure, and then the internal pressure is changed to second pressure that is lower than the first pressure. The wafer (W) is raised from the loading base (3) by lifting pins (41) simultaneously with the change in set pressure. When the pressure is changed from the first pressure to the second pressure, the process gas entering between the surface of the loading base (3) and the wafer (W) is discharged, and the wafer (W) on the surface of the loading base (3) is slid by the operation of flow of the process gas. For this reason, when the pressure is changed, the wafer (W) is raised from the loading base (3) by the lifting pins (41) to support the wafer (W) at the front ends of three lifting pins (41). Accordingly, static friction is increased, and the sliding of the wafer (W) on the loading base (3) during processing is suppressed.
申请公布号 KR20160101670(A) 申请公布日期 2016.08.25
申请号 KR20160016430 申请日期 2016.02.12
申请人 TOKYO ELECTRON LIMITED 发明人 YAMASAKI HIDEAKI;URANO TOMONARI
分类号 H01L21/02;H01L21/54;H01L21/60;H01L21/677;H01L21/683;H01L21/687 主分类号 H01L21/02
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