| 摘要 |
PURPOSE:To selectively disconnect a metal wiring by a method wherein an Si film is attached to a prescribed part of a conductive layer installed on an Si substrate and is exposed to an energy beam. CONSTITUTION:The part 2 of an approxmately 1mum-thick Al wiring 1 located on an Si chip is covered with a 10<2>-10<3> Angstrom -thick amorphous Si film 3. When the Si film 3 is exposed to a laser beam 5, because of the difference in reflectance, it absorbs more energy than the Al wiring 1. A properly selected quantity of beam radiation results in the selective fusion of a part occupied by the Si film 3, which in turn causes the Al wiring 1 to be disconnected. In this process, Si and Al form an alloy. Poly-Si may be used for an Mo wiring. The device being constructed as such, the fusion of the Al wiring 1 is finished neatly, not at all affecting the surroundings. |
