| 发明名称 |
PROCESS FOR THE PRELIMINARY HEATING OF SEMICONDUCTOR BODIES IN VIEW OF SUBSEQUENTLY INCREASING THEIR INTERNAL GETTERING EFFECT |
| 摘要 |
<p>The gettering effect in the bulk of semiconductor bodies is increased by heating the bodies prior to device processing to a temperature of from 750 DEG -900 DEG C. for from 1-8 hours in order to generate oxygen precipitates in the form of clusters.</p> |
| 申请公布号 |
EP0008661(B1) |
申请公布日期 |
1983.10.05 |
| 申请号 |
EP19790102641 |
申请日期 |
1979.07.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;COMPAGNIE IBM FRANCE |
发明人 |
CAZCARRA, VICTOR GASTON |
| 分类号 |
C30B33/00;H01L21/322;H01L29/167;(IPC1-7):01L21/322;01L29/167;30B33/00;01L21/324 |
主分类号 |
C30B33/00 |
| 代理机构 |
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