| 摘要 |
PURPOSE:To realize high speed growth of an amorphous silicon thin film of the hydrogen system using a conventional apparatus without deteriorating photoelectric and electrical characteristics, curtail a preparation time and obtain a silicon film having good characteristic by attaining growth of silicon film from a high order silane in such a discharge power region where a ratio of (film growth rate)/(gas flow rate) becomes almost constant when a discharge power increases. CONSTITUTION:Numeral 1 indicates a chamber comprising a discharge electrode 2 to which a DC-AC voltage for sustaining discharge is applied from a discharge power supply 3. The chamber 1 further comprises a substrate heating means 4 on on which a pyrex etc. is placed for heating process, and is connected with a raw material supply means 6 which supplies raw material gas to a discharging region 5 formed in the vicinity of said discharging electrode 2 and an exhaust means 7 which exhausts the air from the inside of chamber 1. A high order silane such as disilane is introduced into the chamber. Thereafter, when the discharge is started and a discharge power is increased, growth rate of film gradually increases and when a discharge power increases further from a certain power, the growth rate becomes almost constant. Thereby, a growth rate about 5 times of that when obtaining an amorphous silicon film from monosilane of the same flow rate can be obtained. |
