| 摘要 |
PURPOSE:To shorten the time for mask positioning, to improve yield and to realize the positioning of both surfaces with high accuracy by placing the mask onto the resist film of a second main surface and positioning the mask in conformity with the pattern of a first main surface in a pattern forming method for a semiconductor element. CONSTITUTION:An Al2O3 film 13 is removed through etching, and a SiO2 film 15 is attached onto the first main surface 2. The SiO2 film of a circular pattern section formed onto the first main surface 2 is removed while using the circular groove 14 of a section not grown, which is coated with the Al2O3 film, as an index for mask alignment. An N type InP semiconductor base body 8 exposed to the circular groove 14 section of the section not grown is etched selectively. The base body is etched penetratively at that time. An etching pattern 16 is exposed to one part on the second main surface 3 side by grinding a semiconductor substrate 30 from the second main surface 3. A pattern positioned to the pattern formed previously to the first main surface 2 is baked onto the second main surface 3 while using the pattern exposed as an index. |
