| 摘要 |
PURPOSE:To prevent the generation of dispersion in the resistance value of the resistor to be formed even when discrepancy of positioning of a mask is generated by a method wherein between the high resistivity regions, the low resistivity region having width narrower than width of the regions thereof by the value in which discrepancy of mask positioning is estimated is formed. CONSTITUTION:A P<+> type diffusion treatment is performed to an N type epitaxial layer 2 on a substrate 1 through the mask 4 to form the regions 3, 3 to be the large resistivity regions. The mask 4 is removed by etching, and the mask 5 is applied thereon. The mask 5 thereof is narrower than width of the mask 4 by the previously decided value. The value thereof is so selected as to be larger than the value expected to be generated by positioning of the masks 4, 5. A diffusion treatment is performed through the mask thereof to make the region 6 to have smaller resistivity than the regions 3, 3, and moreover to be formed in the conductive type the same with the regions 3, 3, and the second impurity diffusion region is formed. The regions 3, 6, 3 are connected electrically, and the resistor 7 having the resistance value to be decided according to resistivities and geometrical sizes thereof is formed. |
