| 摘要 |
PURPOSE:To enable to form easily Schottky junction of high performance by a method wherein a process to form selectively an opening part and a process to form a metal silicide layer on the surface of an island region exposed from said opening part are furnished. CONSTITUTION:A thermal oxide film 301 on the N type collector region 27 of the first island region and on a P<+> type outside base region 32 is selectively etched to be removed as to make the thermal oxide film 301 thereof to be left by 1mum from the circumference of the above mentioned isolating oxide film 26, and the opening part 37 is formed. Then Pt is stacked on the whole surface at 500Angstrom thickness, and after a heat treatment is performed in a nitrogen atmosphere at 550 deg.C for 10min, by removing unreacted Pt according to an aqua regia treatment, the PtSi layers 381, 382, 383 are formed. As a result, Schottky junction of 0.80-0.85eV barrier height consisting of the regions thereof and the PtSi layer 381 is formed on the above-mentioned N type collector region 27 and the P<+> type outside base region 32 without coming in contact with the above- mentioned isolating oxide film 26. |
