| 摘要 |
PURPOSE:To enable to simplify the process of manufacture, to obtain products of high efficiency and uniformity as well as to accomplish a planar type element structure by a method wherein a gate region is provided using two kinds of insulating films, and said gate region is made into buried form by epitaxially growing an N type GaAs active layer selectively. CONSTITUTION:An N<+> type conductive layer 22 is provided on the surface of a semiinsulative GaAs substrate 21, the first and the second insulating films 23 and 24 are provided, and a gate region aperture 26 of the length Lg is provided on the film 24. A selective etching is performed using the film 24 as a mask, a gate region aperture 27 of the length L'g is provided, a selective etching is performed on the film 22 using the film 23 as a mask, and a gate region aperture 28 of the length L''g is formed. Then, an N type GaAs active layer 29 is formed by performing a selectively buried epitaxial growth, a vacuum-evaporation is performed on a Schottky junction metal using the film 24 as a mask, and a Schottky junction electrode 30 of an approximate length Lg is provided on the layer 29. |
