| 摘要 |
PURPOSE:To selectively form a thin film without using a photolithographic technique by a method wherein a photochemical reaction is generated by selectively irradiating a laser light on the substrate. CONSTITUTION:An introducing gas is selected corresponding to the thin film which is going to be formed, and a mixed gas is supplied into a reaction chamber 7 through an introducing port 9 and a lead-out part 10. A semiconductor substrate 12 is supported in the gas and the temperature at which the reaction with the supplied gas is not accelerated is maintained by a heating coil 13. The laser light 4 selected to the excitation wavelength, with which reaction gas will be highly absorbed, irradiated on the position of the prescribed surface of the semiconductor substrate 12 through an entrance window 8 by a mirror 6 which is controlled by a position controlling system 5. Thin films such as an insulating film, a semiconductor film, a metal film and the like are selectively formed on the part where the laser beam is irradiated by the generation of a photochemical reaction. According to circumstances, these thin films are removed by performing a selective etching. |
