| 摘要 |
PURPOSE:To increase the speed of film generation, and to obtain minute film quality when the dielectric thin film is to be formed according to the high-frequency sputtering method by a method wherein electromagnetic field discharge to cross generation of plasma on the cathode side at right angles is used, while high-frequency electric power is applied to the substrate side. CONSTITUTION:A circular and plane type quartz plate is used for a target 11 to be used as the cathode, a magnet (not shown) is arranged at the lower part thereof, and electromagnetic field discharge to cross them at right angles is generated. Moreover the target 11 is earthed through a high-frequency AC electric power source 12 of 13.56MHz, and electric power to be applied to the target 11 is made as to make reflected electric power to be suppressed within 5% using a matching circuit. Then the Si substrate 13 to be used as the anode is arranged at the upper part of the target 11 interposing an interval between them, and is earthed through a high-frequency AC electric power source 14 of 13.56MHz, with, 200W output. At this time, electric power to be applied to the substrate 13 from the power source 14 is made as to make reflected electric power to be suppressed within 25% according to the matching circuit, while the distance between the substrate 13 and the target 11 is set at about 15cm, and Ar is used as gas. |
