| 摘要 |
PURPOSE:To prevent the deterioration of bonding strength by a method wherein, in the case of the bonding device used to perform an internal connection between a semiconductor element and a sheath, the feeding part with which the material to be processed is conveyed to the bonding position successively and the bonding position are placed in a reducing atmosphere. CONSTITUTION:The bonding device, with which the semiconductor element and the sheath will be internally connected, is composed of a bonding part 2a, a frame feeding part 11, a bonding part 4 and an unloading part 2b, and the element and the sheath are passed through the above-mentioned parts. According to this constitution, the feeding part 11 consists of a heater 11c for reduction and a gas introducing part 11b for reduction, and said feeding part is surrounded by a tunnel 11a. Subsequently, the interior of the tunnel 11a is heated up to 300 deg.C or above, and an electrode, the frame surface or the plated part of the frame is reduced and activated. Then, the temperature is lowered to 100 deg.C or below at the outlet of the tunnel, and the above is conveyed to the bonding part 4 where a heater 5 is provided. |
