PROCESS FOR REDUCING THE INTERDIFFUSION OF CONDUCTORS AND/OR SEMICONDUCTORS IN CONTACT WITH EACH OTHER

摘要

The interdiffusion at the interface between a metallic-type conductor or semiconductor and a second metallic-type conductor or semiconductor in intimate contact therewith due to elevated temperatures is reduced by subjecting a surface of at least one of the materials when at an elevated temperature to a gas which contains at least one component which changes the surface potential and work function of the surface which is subjected to the gas in a direction according to the relative electronegativities of the materials.