发明名称 SEMICUSTOM LSI
摘要 PURPOSE:To form a semicustom LSI having an input/output buffer unit which can readily produce a large current output and is not restricted in its utility method with small occupying area of the buffer unit on a master chip having at least a C-MOS gate array in the chip. CONSTITUTION:An input/output buffer unit 3 having a C-MOS logic unit 1, a bipolar analog unit 2 formed therein and pads 4 disposed at the periphery, has, in addition to N-P-N transistors for respective pads 4, a P-MOS, an N- MOS, a diode and a resistor. When the pads 4 are used as input pins, a C-MOS is formed of the P-MOS5 in the vicinity of the pad 4 and the N-MOS6, and a wiring pattern forming an inverter connected between a power source and a GND. When the pads 4 are used as output pins, the collector of an N-P-N transistor 8 and the drain of the P-MOS5 to the pad 4 and a wiring pattern is formed to input an output signal (a) to the base of the transistor 8 and to the gate of the P-MOS5.
申请公布号 JPS58162048(A) 申请公布日期 1983.09.26
申请号 JP19820045181 申请日期 1982.03.19
申请人 RICOH KK 发明人 RI SADAICHI
分类号 H01L21/822;H01L21/82;H01L27/04;H01L27/118 主分类号 H01L21/822
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