| 摘要 |
<p>PURPOSE:To obtain tolerance for the influence of disturbance by providing a high-voltage generation part whose voltage is boosted to the 2nd power voltage higher than the 1st power voltage supplied externally, and holding peripheral circuits at the 1st power voltage and each memory cell at the 2nd power voltage. CONSTITUTION:Two kinds of wiring of the power source system of a static RAM are used. One is connected to an external power source by VCC and includes peripheral circuits, e.g. a row decoder 20, column decoder 21, sense amplifier 22, data-in buffer 23, and bit line load 24. The other is connected to a high-potential power source V CC and includes only memory cells 25. Consequently, more charges than that generated when the VCC is used at the drain of the memory cells are accumulated, so malfunction due to disturbance of an alpha line, etc., is eliminated and the power consumption is reduced.</p> |
