| 摘要 |
PURPOSE:To improve the yield and reliability, by using as an electrode, a carbide layer formed by diffusing at least one kind among Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Me and W, to a diamond surface layer of its inside. CONSTITUTION:To one side of a block diamond raw material 1, an Si ion is implanted under accelerated voltage. After that, it is annealed in a vacuum and a layer 5 of SiC is generated. This block diamond is worked by a grinding method. Height of its keep part in this case is about 2mum, the keel width is about 2mum, and depth of the keel part is about 4mum. A signal detecting characteristic of this stylus electrode is almost equal to a conventional one. Also, at the time of grinding, exfoliation and damage of the SiC layer are not generated at all, and also in case of slide-running of the disk, too, a phenomenon corresponding to retreat of the electrode is not generated. |
