| 摘要 |
PURPOSE:To obtain a photoconductive material having always stable electrical, optical, and photoconductive characteristics almost unaffected by use environments, remarkably excellent optical fatigue resistance, said properties not deteriorated by repeated uses, superior durability, and residual potential observed not at all, or very little. CONSTITUTION:A photoconductive material 100 comprises a substrate 101, a first photoconductive amorphous layer 102 composed of an amorphous material contg. Si as a main component, and a second amorphous layer 106 composed of Si, C, and H. The layer 102 has a first layer region 103 contg. O as a component in a state of distribution continuous in the thcikness direction and rich on the side of said substrate 101, and a second layer regin 104 contg. an element of group III of the periodic table, including th region 103 on the side of the substrate 101, and the layer 102 has the following relationship: TB/T<=1, where TB is thickness of the layer region 104, and T is thickness of the layer 102 subtracted by TB. |
