| 摘要 |
<p>PROCESS FOR THE REMOVAL OF SPECIFIC CRYSTAL STRUCTURE DEFECTS FROM SEMICONDUCTOR DISCS The invention relates to an improved method for removing point defects and point defect clusters from semiconductor discs, which defects impair the quality of electronic components or structural elements made from such discs. According to the invention, prior to polishing, the semiconductor discs are immersed in a bath containing grains moving in a streaming carrier medium of the bath. One side of the discs are then polished and thereafter the discs are subjected to oxidation processes whereby stacking faults are induced in the rear side of the discs. These stacking faults have an excellent gettering effect on the point defects.</p> |
