| 摘要 |
PURPOSE:To obtain a photoreceptor having high sharpness, high resolution, and high photosensitivity, by successively forming on a substrate a first amorphous Si layer having a layer region contg. an element of group V of the periodic table continuously decreasing upward thickness direction, and a second amorphous Si layer contg. C and H. CONSTITUTION:An electrophotogaphic receptor 100 is obtained by forming on a conductive substrate 101, a first amorphous Si layer 102 contg. an amt. of element in group V of the periodic table, such as P or As, reaching to the max. value CB at the interface tB between the substrate 101 and a layer region 103 in the layer 102, and continuously decreasing in the upward thickness direction (t) down to 0 at the interface tT between the layer region 103, 104, as shown in the lower graph, and on the layer region 104 of the layer 102, a second amorphous Si layer 105 contg. C and H. The layer region 103 effectively obstructs injection of charge from the substrate 101 side in the dark, permitting enhancement of charging characteristics, photosensitivity, and durability, and no accumulation of fatigue of the characteristics due to repeated uses. |
