| 摘要 |
PURPOSE:To enable to build-in a high frequency switching diode in a normal integrated circuit and thus offer a device suitable for the integration, by forming an electrode of ohmic contact on an active layer. CONSTITUTION:By utilizing the resistance of an epitaxial layer 4 existing on the same chip as the resistance for bias supply, it is possible to form easily simultaneously with the high frequency switching diode. Thus, one end of the resistance is formed by providing the metallic electrode 7 of ohmic contact on the epitaxial layer 4 of high resistivity, and the other end is constituted of a metallic electrode 6 provided on a substrate layer 5 having a low resistivity. This is a structure common to the cathode of the diode. |
