发明名称 PREPARATION OF THIN FILM
摘要 PURPOSE:To easily prepare a thin film having high super-conductive transition temp., in forming the thin film on a substrate in a vacuum chamber, by intermittently irradiating laser beams to the surface of the thin film during a forming process to heat said thin film. CONSTITUTION:During a process wherein particles are deposited on a substrate in a vacuum chamber to form a thin layer, laser beams are intermittently irradiated to the surface of the thin film to successively heat the surface of said thin film and, as the thin film is grown, the whole thin film is transferred to a high temp. stable phase. By this method, because the temp. of the substrate can be held at a relatively low temp. and the rising of the temp. of the surface of the thin film and the cooling thereof are extremely rapid, phase transition is not generated even in a high temp. phase. Therefore, the intake of impurities into the thin film is reduced and the thin film high in super-conductive transition temp. can be easily prepared.
申请公布号 JPS58153775(A) 申请公布日期 1983.09.12
申请号 JP19820035093 申请日期 1982.03.08
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 ASANO HIDEFUMI;TERADA AKIRA;NAKAMURA TAKAYUKI;TAKEI KOUJI
分类号 C23C14/24;C23C14/34;C23C14/54 主分类号 C23C14/24
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