| 摘要 |
PURPOSE:To improve S/N at signal reproduction, by forming a dielectric layer with good adhesive strength between a photoresist film and a substrate. CONSTITUTION:On the substrate 1, a negative resist layer 10 made of the dielectric layer and positive resist are provided. In this case, a metallic thin film 14 is interposed to increase the adhesive strength between the substrate 1 and negative resist layer 10. Then, the positive resist 3 is irradiated with a laser light beam 5 converged through an optical system 4. Then, development is carried out by using a developer for a positive type to remove the resist layer in an exposure area 12 while the resist layer in an unexposed area, forming a recessed and projecting pattern 15. The formation the recessed and projecting pattern of the photoresist is caused by one of an increase in moledular weight due to polymerization, an increase in molecular weight due to cross-linking, cross-linking polymerization wherein cross-linking occurs simultaneously, and a decrease in molecular weight. Further, any dielectic layer, such as urethane, chloroprene, and nitrile butadiene, having superior adhesive strength to the substrate and positive resist film is usable. |
