发明名称 PRODUCTION OF BIBENZYL
摘要 PURPOSE:Using a semiconductor with a specific band gap as a catalyst, inexpensive toluene is irradiated with light to produce bibenzyl easily in high selectivity, which is used as an intermediate of styrene or of a variety of derivatives. CONSTITUTION:A semiconductor photocatalyst is dispersed in toluene and the dispersion is irradiated with light of 200-1,000nm/hr in an inert gas such as nitrogen gas, preferably at room temperature to produce bibenzyl. The semiconductor has a band gap of less than 5.0eV and, e.g., titanium oxide, tungsten oxide or their combination is used. Further, in order to increase the oxidation- reduction performance, a Pt, Pd or Au compound such as sodium chloroplatinate is added as a semiconductor electrode to effect photovoltaic reaction. The amount of the catalyst is 0.01-10pts. per 100pts. of the toluene on the reaction preferably.
申请公布号 JPS58152827(A) 申请公布日期 1983.09.10
申请号 JP19820035139 申请日期 1982.03.08
申请人 ASAHI KASEI KOGYO KK 发明人 FUJIHIRA MASAMICHI;SATOU YOSHIHARU;CHIYOU TETSUO
分类号 C07C2/76;B01J19/08;B01J21/00;B01J21/06;C07B61/00;C07C1/00;C07C15/18;C07C67/00 主分类号 C07C2/76
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