Electrophotographic recording material and process for its production

摘要

The electrophotographic recording material comprising an electrically conductive backing and a crystalline inorganic photoconductor layer of a II-VI compound semiconductor applied to the backing by cathode sputtering without the action of a bias voltage on the anode side, has a trap concentration of the photoconductor of more than 1x10<16> cm<-3>, to reduce charge transport. High charging voltages at small photoconductor layer thicknesses above 1 mu m are achieved with this photoconductor material. The layer thicknesses which are smaller than those of known photoconductor layers based on selenium make better resolution possible. Because of greater layer thicknesses and higher charging voltages than with known crystalline photoconductors, these can also be used in rapid electrophotographic apparatuses.