| 摘要 |
PURPOSE:To obtain a compd. having gamma-bismuth structure with increased electric resistance by heating a single crystal of a compd. having gamma-bismuth structure to a specified temp. or above while shielding light having a specified short wavelength or below. CONSTITUTION:A single crystal of a compd. having gamma-bismuth structure such as Bi12GeO20, Bi12SiO20, Bi12TiO20 or Bi40FeO63 is heated to >=200 deg.C while shielding light having <=700nm wavelength. The electric resistance can be increased from 10<7>-10<10>OMEGA.cm to 10<11>-10<12>OMEGA.cm. As a result, a device utilizing an electrooptical effect such as a voltage sensor can be designed. |
