发明名称 |
Optical lithography process for creating patterns in a silicon semiconductor substrate. |
摘要 |
<p>The invention relates to an optical lithography process for creating patterns in a silicon semiconductor substrate. The improved resolution, as used in the very large scale integration of electronic circuits, is obtained by employing a thin film of 4-phenylazo-1-naphthylamine between the silicon substrate and the overlying layer of a light sensitive photoresist. The 4-phenylazo-1-naphthylamine acts as a stable, highly light absorbent medium exhibiting chemical and physical compatibility with the silicon substrate and photoresists with ether-type solvent systems. </p> |
申请公布号 |
EP0087582(A2) |
申请公布日期 |
1983.09.07 |
申请号 |
EP19830100693 |
申请日期 |
1983.01.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KAPLAN, LEON H.;KAPLAN, RICHARD DEAN;ZIMMERMAN, STEVEN MICHAEL |
分类号 |
G03F7/26;G03F7/039;G03F7/09;G03F7/105;G03F7/11;H01L21/027;(IPC1-7):03F7/02 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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