| 摘要 |
PURPOSE:To obtain a color solid-state image pickup element having no defect, by executing a process for forming a resist mask on a wafer on which a solid- state image pickup element is formed, a process for vapor-depositing a color material, and a process for selectively removing a color material vapor-deposited layer. CONSTITUTION:On a wafer 1, a resist film 2 is applied by a spinner, etc., and after that, it is prebaked, and exposure and development are executed by use of a mask of an optional shape such as a stripe or a mosaic, etc., by which a mask pattern is formed. This resist mask 3 is melted and removed after vapor- deposition, therefore, exposure of the whole surface is executed in advance as necessary, and a color material having the desired spectral characteristics is vapor-deposited by 1 layer or >=2 layers, by which a color material vapor- deposited film 4 is formed. Thereafter, the resist mask is melted and removed, the color material vapor-deposited film on the mask is selectively removed, and a color element of a desired color material vapor-depostied film is obtained. Such a process is repeated by the number of desired colors, and a color filter consisting of only the color material vapor-deposited film can be formed on the wafer 1. |
