| 摘要 |
PURPOSE:To improve the reliability of the insulation between a gate electrode and a source, a drain by removing a film formed on a gate before the step of forming a metal semiconductor compound on the gate electrode, source and drain regions, thereby selectively growing the metal or metal semiconductor on the gate electrode and the source, drain regions. CONSTITUTION:A field oxidized film 102, a gate oxidized film 103, a phosphorus- doped polycrystalline silicon film 104 and an Al film 105 are formed on a P type silicon substrate 101. Then, an Al film 106, the film 105 and the film 104 are selectively etched, and a source and drain region 107 and a wiring region 107' are formed by As ion implantation. Then, when a silicon oxidized film 108 is formed and is etched and removed, a silicon oxidized film 108' remains. Subsequently, the film 106 is removed, tungsten (W) 109 is then deposited in vacuum and annealed, and a tungsten silicide (WSi2) is then grown. Thereafter, an MOS transistor is completed in accordance with the ordinary manufacturing steps. |
