| 摘要 |
PURPOSE:To enable the impression of sufficient reverse bias between the gate electrode and cathode of an auxiliary gate turn-of thyristor (GTO) resulting in the improvement of turn-off ability by a method wherein the gate electrode of a main GTO is connected to the cathode of the auxiliary GTO via a connection electrode, when the main GTO and the auxiliary GTO are provided with an isolation region placed therebetween. CONSTITUTION:With the isolation region 17 placed between, the main and auxiliary GTO elements 8 and 9 are provided on the both sides thereof into the GTO with the auxiliary GTO built-in. In this constitution, a layer 3 used for the main GTO and a layer 12 used for the auxiliary GTO are formed as the emitter layers, then n type layers thereon are respectively used for the base layers 1 and 10, and p layers thereon are respectively used for the base layers 2 and 11. Further, a plurality of n type emitter layers 4 are formed on the main GTO layer 2, and an n type emitter layer 13 is formed on the auxiliary GTO, and an isolation n type region 18 is provided in the region 17. Thereafter, the gate electrode 7 of the main GTO provided on the layer 2 and the cathode 14 of the auxiliary GTO are coupled via the connection electrode 19. |
