| 摘要 |
PURPOSE:To prevent the breakdown of GaAs IC element due to static electricity by a method wherein an input terminal is connected to the drain of a transistor via the first and third resistors, a source to the reference power source, and a gate to the reference power source via the second resistor, further a capacitor is formed between the contact of the first and third resistors and the other end of the second resistor. CONSTITUTION:n<+> type regions 2 and 3 are formed on a semi-insulating GaAs substrate 1, thus the source and drain of an MES type transistor 6 are constituted, then an n type region 4 is provided between the regions 2 and 3, and accordingly a Schottky barrier is generated between the gate region 5 of the transistor 6. Next, an input terminal 7 is connected to the region 2 via a resistor 8, a capacitor 9 and a resistor 10, and then the connection point of the resistor 8 and the capacitor 9 is connected to the region 3 via a resistor 11. Further, the connection point of the capacitor 9 and the resistor 10 is connected to the region 5, and thus the reference potential VSS is supplied to the region 2. Thus, the breakdown of the circuit due to static electricity is prevented by the capacitor, MES type transistor and resistors. |
