| 摘要 |
<p>PURPOSE:To impart a damage to a foreign matter adhering on an article to be washed, to improve the wettability of the article to be washed and to prevent the generation of fouling by the foreign matter and a washing by conducting plasma treatment prior to washing by the washing when washing a photo-mask, a semiconductor substrate, etc. CONSTITUTION:The method of washing consists of each process of plasma treatment by the mixed gas of CF4 gas and O2 gas, dip-washing and drying. A photo-mask with a resist pattern is arranged in a plasma treater first, OF4/O2 gas is introduced into the device, and the gas is changed into plasma and plasma treatment is executed. A CF4-gas flow rate of 100sccm, an O2 gas flow rate of 40sccm, gas pressure of 3OPA and BF power of 0. 5W/cm<2> and the treating time of 10 sec are adopted as the conditions of treatment. Dip-washing is performed by concentrated sulfuric acid. The time of washing functions as a process peeling the resist pattern in combination. The photo-masks from which the resist patterns are peeled are dipped into a pure water tank 3 in succession, and ultrasonic-washed. The photo-masks are immersed in IPA and ultrasonic-washed similarly, and vapor-dried by IPA vapor, thus completing the washing of the phoyo-masks.</p> |
