| 摘要 |
PURPOSE:To simplify the removal of resist after a conductive substance has been coated when a wiring layer is formed using a lift-off method, to prevent the generation of step-disconnection of a wiring layer as well as to contrive improvement in the yield rate of production of the titled semiconductor device by a method wherein an alteration layer is formed on the surface of a conductive film located inside a contact hole, and the resist is removed using said alteration layer as a mask. CONSTITUTION:A contact hole 3 is provided using a resist 5, and a conductive film 6 is vapor-deposited. Subsequently, when an alteration layer 8 is formed on the surface of the conductive film 6 located inside the contact hole 3 which is electrically conductive with a semiconductor substrate, no change is observed on the conductive film 6 located on the resist 5 which is non-conductive with the substrate 1, and when the conductive film 6 is selectively removed, the resist 5 is exposed, thereby enabling to remove the resist easily. After the resist 5 has been removed, the contact hole 3 is buried by the conductive film 6, and when the alteration layer 8 is removed and a new conductive film 7 is vapor-deposited, the conductive film 6, which was buried in the contact hole 3 in the preceding process, and the conductive film 7 can be electrically contacted easily. Besides, a wiring pattern is formed and the desired wiring can be accomplished. |
