发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive not to necessitate a light source, etc. for irradiation outside a low temperature package, by containing the electromagnetic wave source of the light source, etc. necessary for irradiation, together with a transistor element of high electron mobility, in the low temperature package. CONSTITUTION:The transistor 1 of high electron mobility wherein the electron excited by receiving the irradiation of the electromagnetic wave of the light source at a low temperature is the electron source of the group of accumulated electrons, and a semiconductor light emitting element 2 are contained in the low temperature package 3. Where, the internal surface of the package 3 is formed a reflection surface, and thus contrived to utilize not only the direct light from the element 2, but also the reflected light. Thereby, the light source, etc. for irradiation are not necessitated outside the low temperature package, and accordingly a light receiving window is not necessitated to the low temperature package.
申请公布号 JPS58147077(A) 申请公布日期 1983.09.01
申请号 JP19820028410 申请日期 1982.02.24
申请人 FUJITSU KK 发明人 OKAMURA SHIGERU
分类号 H01L21/338;H01L29/778;H01L29/80;H01L29/812;H01L31/10 主分类号 H01L21/338
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