发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To attain stable operating characteristics, high speed and low power consumption, by connecting at least an FET of the 1st stage of an output buffer to a source follower. CONSTITUTION:The FET1 of the 1st stage of an output buffer, the FET2 of the final stage of the output buffer and the souce 3 of the FET2 are provided. The source 3 of the FET2 of the final stage is connected to an output drain power supply voltage terminal VDDout via capacitor 4 and a resistor 5, and the output is picked up from the source 3. In this circuit, a separate power supply for the buffer is not required and the reflection from a tansmission line 6 is prevented, by selecting a mutual conductance gm of the FET2 of the final stage suitably.
申请公布号 JPS58145235(A) 申请公布日期 1983.08.30
申请号 JP19820027201 申请日期 1982.02.22
申请人 MATSUSHITA DENKI SANGYO KK 发明人 KATSU SHINICHI;SHIMANO AKIO;NANBU SHIYUUTAROU
分类号 H01L29/80;H01L27/08;H01L27/095;H03K5/02;H03K19/0952 主分类号 H01L29/80
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