| 摘要 |
PURPOSE:To decrease the leakage currents of a gate by field concentration, and to reduce the low-frequency dispersion of gm (transconductance) of the FET by forming all angles of the gate in a curve with the radius of curvature of 0.1mum or more. CONSTITUTION:The angles of 22, 23 of the gate 5 are curved, field concentration at these gate angles is removed, and the leakage currents of the gate flowing through the angles 22, 23 are decreased. That is, minimum values of the radii of curvature of the curves of the angles 22, 23 of a gate pattern are made to reach 0.1mum or more-in other words, all angles of the gate are formed so that the radii of curvature of the curves of the angles are larger than 0.1mum. |
